The present study discloses the fabrication of efficient p-n heterojunctions using n-type polymeric bulk carbon nitride (b-CN, = 2.7 eV) or exfoliated nanosheets of carbon nitride (NSCN, = 2.9 eV) with p-type spinel ferrite CaFeO (CFO, = 1.
View Article and Find Full Text PDFWe studied the electronic properties of a high-temperature superconductor in proximity to a ferromagnetic material in a bilayer film of LaSrMnO (LSMO)/YBaCuO (YBCO). High-quality single-crystalline films of YBCO and LSMO/YBCO were grown epitaxially on an SrTiO (001) surface. Magnetization data of the LSMO/YBCO bilayer exhibit ferromagnetic transition at about 255 K, which is much smaller than the Curie temperature of bulk LSMO.
View Article and Find Full Text PDFBulk gallium phosphide (GaP) crystallizes in the zinc-blende (ZB) structure and has an indirect bandgap. However, GaP nanowires (NWs) can be synthesized in the wurtzite (WZ) phase as well. The contradictory theoretical predictions and experimental reports on the band structure of WZ GaP suggest a direct or a pseudo-direct bandgap.
View Article and Find Full Text PDFWhile 2D layers of WS2 have been extensively studied, there are very few investigations of WS2 nanotubes. These have usually been grown via a 2-step process involving a WO3-x intermediate. We report a simple process for the synthesis of WS2 nanotubes via the sulfurization of tungsten films under appropriate conditions and present details of their structural and optical properties that help elucidate the formation mechanism.
View Article and Find Full Text PDFIn this work, we demonstrate a simple technique to grow high-quality whiskers of Bi Sr CaCu O - a high T superconductor. Structural analysis shows the single-crystalline nature of the grown whiskers. To probe electrical properties, we exfoliate these whiskers into thin flakes (~50 nm thick) using the scotch-tape technique and develop a process to realize good electrical contacts.
View Article and Find Full Text PDFDespite the numerous reports on the metal-catalyzed growth of GaN nanowires, the mechanism of growth is not well understood. Our study of the nickel-assisted growth of GaN nanowires using metalorganic chemical vapor deposition provides key insights into this process. From a comprehensive study of over 130 nanowires, we observe that as a function of thickness, the length of the nanowires initially increases and then decreases.
View Article and Find Full Text PDFCrystalline hydrogen titanate (H2Ti3O7) nanowires were irradiated with N(+) ions of different energies and fluences. Scanning electron microscopy reveals that at relatively lower fluence the nanowires are bent and start to adhere strongly to one another as well as to the silicon substrate. At higher fluence, the nanowires show large-scale welding and form a network of mainly 'X' and 'Y' junctions.
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