Carbon-dot doped, transfer-free, low-temperature, high mobility graphene using microwave plasma CVD.

Microwave plasma chemical vapor deposition is a well-known method for low-temperature, large-area direct graphene growth on any insulating substrate without any catalysts. However, the quality has not been significantly better than other graphene synthesis methods such as thermal chemical vapor deposition, thermal decomposition of SiC, . Moreover, the higher carrier mobility in directly grown graphene is much desired for industrial applications.

Laser-assisted graphene growth directly on silicon.

Controlled graphene growth on a substrate without the use of catalysts is of great importance for industrial applications. Here, we report thickness-controlled graphene growth directly on a silicon substrate placed in a low-density microwave plasma environment using a laser. Graphene is relatively easy to grow in high-density plasma; however, low-density plasma lacks the sufficient energy and environment required for graphene synthesis.

Direct Synthesis of Large-Area Graphene on Insulating Substrates at Low Temperature using Microwave Plasma CVD.

With a combination of outstanding properties and a wide spectrum of applications, graphene has emerged as a significant nanomaterial. However, to realize its full potential for practical applications, a number of obstacles have to be overcome, such as low-temperature, transfer-free growth on desired substrates. In most of the reports, direct graphene growth is confined to either a small area or high sheet resistance.