Nonvolatile Control of Valley Polarized Emission in 2D WSe-AlScN Heterostructures.

Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that the integration of 2D materials with ferroelectrics is a promising strategy; however, an experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe channel and an AlScN (AlScN) ferroelectric dielectric and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization.

Chemically Driven Sintering of Colloidal Cu Nanocrystals for Multiscale Electronic and Optical Devices.

Emerging applications of Internet of Things (IoT) technologies in smart health, home, and city, in agriculture and environmental monitoring, and in transportation and manufacturing require materials and devices with engineered physical properties that can be manufactured by low-cost and scalable methods, support flexible forms, and are biocompatible and biodegradable. Here, we report the fabrication and device integration of low-cost and biocompatible/biodegradable colloidal Cu nanocrystal (NC) films through room temperature, solution-based deposition, and sintering, achieved via chemical exchange of NC surface ligands. Treatment of organic-ligand capped Cu NC films with solutions of shorter, environmentally benign, and noncorrosive inorganic reagents, namely, SCN and Cl, effectively removes the organic ligands, drives NC grain growth, and limits film oxidation.

Multistate, Ultrathin, Back-End-of-Line-Compatible AlScN Ferroelectric Diodes.

The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates nonvolatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL)-compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE diodes scaled to 5, 10, and 20 nm FE AlScN/AlScN films.

Frequency tunable magnetostatic wave filters with zero static power magnetic biasing circuitry.

A single tunable filter simplifies complexity, reduces insertion loss, and minimizes size compared to frequency switchable filter banks commonly used for radio frequency (RF) band selection. Magnetostatic wave (MSW) filters stand out for their wide, continuous frequency tuning and high-quality factor. However, MSW filters employing electromagnets for tuning consume excessive power and space, unsuitable for consumer wireless applications.

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors.

Three-dimensional monolithic integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrent with enhanced energy efficiency in big data applications such as artificial intelligence. Despite decades of efforts, there remains an urgent need for reliable, compact, fast, energy-efficient and scalable memory devices.

Wurtzite and fluorite ferroelectric materials for electronic memory.

Ferroelectric materials, the charge equivalent of magnets, have been the subject of continued research interest since their discovery more than 100 years ago. The spontaneous electric polarization in these crystals, which is non-volatile and programmable, is appealing for a range of information technologies. However, while magnets have found their way into various types of modern information technology hardware, applications of ferroelectric materials that use their ferroelectric properties are still limited.

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes.

The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at the device level to enable novel compute-in-memory (CIM) operations. A key challenge in the construction of CIM architectures is the conflicting trade-off between the performance and their flexibility for various essential data operations.

Compensation of the Stress Gradient in Physical Vapor Deposited AlScN Films for Microelectromechanical Systems with Low Out-of-Plane Bending.

Thin film through-thickness stress gradients produce out-of-plane bending in released microelectromechanical systems (MEMS) structures. We study the stress and stress gradient of AlScN thin films deposited directly on Si. We show that AlScN cantilever structures realized in films with low average film stress have significant out-of-plane bending when the AlScN material is deposited under constant sputtering conditions.

Vertical and Lateral Etch Survey of Ferroelectric AlN/AlScN in Aqueous KOH Solutions.

Due to their favorable electromechanical properties, such as high sound velocity, low dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and Aluminum Scandium Nitride (AlScN) thin films have achieved widespread application in radio frequency (RF) acoustic devices. The resistance to etching at high scandium alloying, however, has inhibited the realization of devices able to exploit the highest electromechanical coupling coefficients. In this work, we investigated the vertical and lateral etch rates of sputtered AlN and AlScN with Sc concentration x ranging from 0 to 0.

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-power, nonvolatile memories and made FE memories a commercial reality. Despite these advances, progress on commercial FE-RAM based on lead zirconium titanate has stalled due to process challenges. The recent discovery of ferroelectricity in scandium-doped aluminum nitride (AlScN) presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approximately 350 °C), making it compatible with back end of the line integration on silicon logic.

Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond.

Radio frequency (RF) microelectromechanical systems (MEMS) based on AlScN are replacing AlN-based devices because of their higher achievable bandwidths, suitable for the fifth-generation (5G) mobile network. However, overheating of AlScN film bulk acoustic resonators (FBARs) used in RF MEMS filters limits power handling and thus the phone's ability to operate in an increasingly congested RF environment while maintaining its maximum data transmission rate. In this work, the ramifications of tailoring of the piezoelectric response and microstructure of AlScN films on the thermal transport have been studied.

Elucidating the origin of spurious modes in aluminum nitride microresonators using a 2-D finite-element model.

In this work, an approach has been developed to predict the location of large spurious modes in the resonant response of aluminum nitride (AlN) microelectromechanical systems (MEMS) resonators over a wide range of desired operating frequencies. This addresses significant challenges in the design of more complex AlN devices, namely the prediction and elimination of spurious modes in the resonance response. Using the finite element method (FEM), the dispersion curves at wavelengths ranging from 8 to 20 μm were computed.

Reduction in the thermal conductivity of single crystalline silicon by phononic crystal patterning.

Phononic crystals (PnCs) are the acoustic wave equivalent of photonic crystals, where a periodic array of scattering inclusions located in a homogeneous host material causes certain frequencies to be completely reflected by the structure. In conjunction with creating a phononic band gap, anomalous dispersion accompanied by a large reduction in phonon group velocities can lead to a massive reduction in silicon thermal conductivity. We measured the cross plane thermal conductivity of a series of single crystalline silicon PnCs using time domain thermoreflectance.

Impact of relative intensity noise of vertical-cavity surface-emitting lasers on optics-based micromachined audio and seismic sensors.

The relative intensity noise of vertical-cavity surface-emitting lasers (VCSELs) in the 100 mHz to 50 kHz frequency range is experimentally investigated using two representative single-mode VCSELs. Measurements in this frequency range are relevant to recently developed optical-based micromachined acoustic and accelerometer sensing structures that utilize VCSELs as the light source to form nearly monolithic 1 mm3 packages. Although this frequency regime is far lower than the gigahertz range relevant to optical communication applications for which VCSELs are primarily designed, the intensity noise is found to be low and well within the range of cancellation using basic reference detection principles.

Visual spatial abilities and fall risk: an assessment tool for individuals with dementia.

Risk of falling is a major concern of long-term care facilities with residents diagnosed with dementia. Use of a brief cognitive assessment focusing on visual spatial abilities could be one strategy in the prevention of falls in residents with dementia. The objective of this study was to determine if a clock test could predict a risk of falls in residents diagnosed with dementia.

Band-tunable and multiplexed integrated circuits for simultaneous recording and stimulation with microelectrode arrays.

Two thin-film microelectrode arrays with integrated circuitry have been developed for extracellular neural recording in behaving animals. An eight-site probe for simultaneous neural recording and stimulation has been designed that includes on-chip amplifiers that can be individually bypassed, allowing direct access to the iridium sites for electrical stimulation. The on-probe amplifiers have a gain of 38.