Publications by authors named "Roy H Olsson Iii"
Article Synopsis
- The study investigates AlScN, a new photonic material, for its potential in electro-optic phase shifting and modulation in integrated photonic devices.
- AlScN is compatible with CMOS technology, which could enable large-scale production of photonic modulators and shows improved optical nonlinearity compared to traditional AlN.
- Measurements of the electro-optic effect in AlScN-based devices revealed an electro-optic coefficient of around 750 V cm, but the response was less than anticipated, prompting a discussion on possible reasons and future developments in AlScN photonics.
Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional (2D) semiconductor channels and ferroelectric AlScN (AlScN) allow high-performance nonvolatile devices with exceptional ON-state currents, large ON/OFF current ratios, and large memory windows (MW). However, previous studies have solely focused on n-type FeFETs, leaving a crucial gap in the development of p-type and ambipolar FeFETs, which are essential for expanding their applicability to a wide range of circuit-level applications. Here, we present a comprehensive demonstration of n-type, p-type, and ambipolar FeFETs on an array scale using AlScN and multilayer/monolayer WSe.
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