Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO Gate Dielectric.

AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal treatment of HfO gate dielectric, however, is known to degrade the oxide/nitride interface due to the formation of Ga-containing oxide.

Sn-Induced Phase Stabilization and Enhanced Thermal Stability of κ-GaO Grown by Mist Chemical Vapor Deposition.

Tin (Sn)-doped orthorhombic gallium oxide (κ-GaO) films were grown on (0001) sapphire by mist chemical vapor deposition. It is known that κ-GaO is more stable than α-GaO (corundum) but less stable than β-GaO (monoclinic). This thermodynamic stability means an optimal growth temperature ( ) of the κ-phase (600-650 °C) is also in between the two.