Demonstration of 300 mm RF-SOI wafers fabricated by layer transfer technology.

State-of-the-art telecom applications have brought a real challenge to the radio-frequency silicon-on-insulator (RF-SOI) performance. This paper presents the key fabrication technologies for domestic 300 mm RF-SOI wafers fulfilling high-volume manufacture for the first time. To achieve stress relaxation, atmospheric pressure chemical vapor deposition (APCVD) coupled with annealing and chemical mechanical polishing (CMP) was applied to deposit the Poly-Si layer, resulting in a handle wafer with higher resistivity and lower warpage.