A 90.9 dB SNDR 95.3 dB DR Audio Delta-Sigma Modulator with FIA-Assisted OTA.

This paper presents a low-power, high-gain integrator design that uses a cascode operational transconductance amplifier (OTA) with floating inverter-amplifier (FIA) assistance. Compared to a traditional cascode, the proposed integrator can achieve a gain of 80 dB, while reducing power consumption by 30%. Upon completing the analysis, the value of the FIA drive capacitor and clock scheme for the FIA-assisted OTA were obtained.

In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfO-Based Neuristor Array.

With the evolution of artificial intelligence, the explosive growth of data from sensory terminals gives rise to severe energy-efficiency bottleneck issues due to cumbersome data interactions among sensory, memory, and computing modules. Heterogeneous integration methods such as chiplet technology can significantly reduce unnecessary data movement; however, they fail to address the fundamental issue of the substantial time and energy overheads resulting from the physical separation of computing and sensory components. Brain-inspired in-sensor neuromorphic computing (ISNC) has plenty of room for such data-intensive applications.

A CMOS Temperature Sensor with a Smart Calibrated Inaccuracy of ±0.11 (3σ).

This paper presents a BJT-based smart CMOS temperature sensor. The analog front-end circuit contains a bias circuit and a bipolar core; the data conversion interface features an incremental delta-sigma analog-to-digital converter. The circuit utilizes the chopping, correlated double sampling, and dynamic element matching techniques to mitigate the effects of process bias and nonideal device characteristics on measurement accuracy.

Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform.

A broadband and CMOS-compatible polarization beam splitter and rotator (PSR) built on the silicon nitride-on-silicon multilayer platform is presented. The PSR is realized by cascading a polarization beam splitter and a polarization rotator, which are both subtly constructed with an asymmetrical directional coupler waveguide structure. The advantage of this device is that the function of PSR can be directly realized in the SiN layer, providing a promising solution to the polarization diversity schemes in SiN photonic circuits.

CMOS-compatible, broadband, and polarization-independent edge coupler for efficient chip coupling with standard single-mode fiber.

A CMOS-compatible, broadband, and polarization-independent edge coupler for efficient chip coupling with standard single-mode fiber is proposed. Three layers of a silicon nitride waveguide array with the same structures are used in the top oxide cladding of the chip to achieve high coupling efficiency and to simplify the mode transformation structure. Optimal total coupling loss at the wavelength of 1550 nm, -0.

Analysis of Orthogonal Coupling Structure Based on Double Three-Contact Vertical Hall Device.

A vertical Hall device is an important component of 3D Hall sensors, used for detecting magnetic fields parallel to the sensor surface. The Hall devices described in existing research still have problems, such as large offset voltage and low sensitivity. Aiming to solve these problems, this study proposes a double three-contact vertical Hall device with low offset voltage, and a conformal mapping analysis method to improve the sensitivity of the device.

A Large Measurable Range Capacitance-to-Digital Converter for Smart Humidity Sensors.

This study aims to propose a capacitance-to-digital converter (CDC) based on a third-order cascade of integrators with a feed-forward (CIFF) incremental sigma-delta modulator for smart humidity sensor application. Disguised zoom-in technology was proposed to enlarge the measurable range of the CDC. The input range of the CDC was 0-388 pF.

A Low Power Energy-Efficient Precision CMOS Temperature Sensor .

This paper presents a low power, energy-efficient precision CMOS temperature sensor. The front-end circuit is based on bipolar junction transistors, and employs a pre-bias circuit and bipolar core. To reduce measurement errors arising from current ratio mismatch, a new dynamic element-matching mode is proposed, which dynamically matches all current sources in the front-end circuit.