In this study an (AlGa)O barrier layer is inserted between β-GaO and GaN in a p-GaN/n-GaO diode photodetector, causing the dark current to decrease considerably, and device performance to improve significantly. The β-GaO/β-(AlGa)O/GaN n-type/Barrier/p-type photodetector achieves a photocurrent gain of 1246, responsivity of 237 A W, and specific detectivity of 5.23 × 10 cm Hz W under a bias of -20 V.
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August 2024
A novel FePt/PPy-C composite nanomaterial has been designed and investigated as a methanol oxidation reaction (MOR) electrocatalyst. The FePt nanoparticles with an average diameter of about 3 nm have been prepared by the co-reduction method and then loaded onto the PPy-C composite support. The electrocatalytic performance is affected by the composition of the FePt nanoparticles.
View Article and Find Full Text PDFWe report a high performance UVB photodetector with a metal-semiconductor-metal device structure based on high crystal quality SnO microwires prepared by chemical vapor deposition. Under 10 V bias, a low dark current of 3.69 × 10 A and a high light-to-dark current ratio of 1630 were achieved.
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