The inherent zero-band gap nature of graphene and its fast photocarrier recombination rate result in poor optical gain and responsivity when graphene is used as the light absorption medium in photodetectors. Here, semiconducting graphene nanoribbons with a direct bandgap of 1.8 eV are synthesized and employed to construct a vertical heterojunction photodetector.
View Article and Find Full Text PDFComposite materials and their applications constitute a hot field of research nowadays due to the fact that they comprise a combination of the unique properties of each component of which they consist. Very often, they exhibit better performance and properties compared to their combined building blocks. Graphene oxide (GO), as the most widely used derivative of graphene, has attracted widespread attention because of its excellent properties.
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