Publications by authors named "Romakanta Bhattarai"

We perform a systematic investigation of several crystal structures, based on monolayer MnBiTe, of the form MnBBXX using first-principles calculations. Our analysis shows that the most energetically favorable bonding configuration of the constituent elements in monolayer MnBBXX is determined by the bond length between the Mn atom and its nearest X-site atoms. Tuning the bonding configuration of the material alters the magnetic, electronic, and topological properties.

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Two-dimensional (2D) hybrid organic-inorganic perovskite (HOIP) crystals show promise as scintillating materials for wide-energy radiation detection, outperforming their three-dimensional counterparts. In this study, we synthesized single crystals of (PEABZA)PbBr ( ranging from 0.1 to 2), utilizing phenethylammonium (CHCHCHNH) and benzylammonium (CHCHNH) cations.

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We investigate a strain-induced topological phase transition in the ferromagnetic Janus monolayer MnSbBiSTe using first-principles calculations. The electronic, magnetic, and topological properties are studied under biaxial strain within the range of -8 to +8%. The ground state of monolayer MnSbBiSTe is metallic with an out-of-plane magnetic easy axis.

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We report a combined experimental and computational study of the optical properties of individual silicon telluride (SiTe) nanoplates. The p-type semiconductor SiTe has a unique layered crystal structure with hexagonal closed-packed Te sublattices and Si-Si dimers occupying octahedral intercalation sites. The orientation of the silicon dimers leads to unique optical and electronic properties.

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Article Synopsis
  • A novel layered structure of silicon ditelluride (SiTe) has been predicted to be more stable than the traditional CdI structure using an evolution algorithm and first-principles calculations.
  • The new SiTe structure features a triclinic unit cell and showcases a balance between the bonding preferences of silicon (tetrahedral) and tellurium (hexagonal close-packing).
  • The study explores the electronic and vibrational properties of SiTe, highlighting its small effective electron mass, which is advantageous for applications in 2D semiconductors like field-effect transistors, along with calculations for Raman and IR spectra for future experiments.
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