Excimer (ultraviolet) laser-induced quantum well intermixing (UV-Laser-QWI) is an attractive technique for wafer level post-growth processing and fabrication of a variety of monolithically integrated photonic devices. The results of UV-Laser-QWI employed for the fabrication of multibandgap III-V semiconductor wafers have demonstrated the attractive character of this approach although the process accuracy and reproducibility have remained relatively weakly covered in related literature. We report on a systematic investigation of the reproducibility of this process induced with a KrF excimer laser.
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