Optimizing interferences of DUV lithography on SOI substrates for the rapid fabrication of sub-wavelength features.

Scalable fabrication of Si nanowires with a critical dimension of about 100 nm is essential to a variety of applications. Current techniques used to reach these dimensions often involve e-beam lithography or deep-UV (DUV) lithography combined with resolution enhancement techniques. In this study, we report the fabrication of <150 nm Si nanowires from SOI substrates using DUV lithography ( = 248 nm) by adjusting the exposure dose.