Defect Proliferation at the Quasicondensate Crossover of Two-Dimensional Dipolar Excitons Trapped in Coupled GaAs Quantum Wells.

We study ultracold dipolar excitons confined in a 10  μm trap of a double GaAs quantum well. Based on the local density approximation, we unveil for the first time the equation of state of excitons. Specifically, in this regime and below a critical temperature of about 1 K, we show that for a local density n∼(2-3)×10^{10}  cm^{-2} a coherent quasicondensate phase forms in the inner region of the trap, encircled by a more dilute and normal component in the outer rim.

Publisher's Note: Quantized Vortices and Four-Component Superfluidity of Semiconductor Excitons [Phys. Rev. Lett. 118, 127402 (2017)].

This corrects the article DOI: 10.1103/PhysRevLett.118.

Quantized Vortices and Four-Component Superfluidity of Semiconductor Excitons.

We study spatially indirect excitons of GaAs quantum wells, confined in a 10  μm electrostatic trap. Below a critical temperature of about 1 K, we detect macroscopic spatial coherence and quantized vortices in the weak photoluminescence emitted from the trap. These quantum signatures are restricted to a narrow range of density, in a dilute regime.