Oxygen vacancy dynamics in Pt/TiO/TaO/Pt memristors: exchange with the environment and internal electromigration.

Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiO/TaO/Pt devices, the exchange of OV between the device and the environment upon the application of electrical stress.