Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO as an Electron Transport Layer in Planar Perovskite Solar Cells.

In this work, we present an extensive characterization of plasma-assisted atomic-layer-deposited SnO layers, with the aim of identifying key material properties of SnO to serve as an efficient electron transport layer in perovskite solar cells (PSCs). Electrically resistive SnO films are fabricated at 50 °C, while a SnO film with a low electrical resistivity of 1.8 × 10 Ω cm, a carrier density of 9.