van der Waals Epitaxy of High-Mobility Polymorphic Structure of MoTe Nanoplates/MoTe Atomic Layers with Low Schottky Barrier Height.

High contact resistance between two-dimensional (2D) transition metal dichalcogenides (TMDs) and metal electrodes is a practical barrier for applications of 2D TMDs to conventional devices. A promising solution to this is polymorphic integration of 1T'-phase semimetallic and 2H-phase semiconducting TMD crystals, which can lower the Schottky barrier of the TMDs. Here, we demonstrate the van der Waals epitaxy of density-controlled single isolated 1T'-MoTe nanoplates on 2H-MoTe atomic layers by using metal-organic chemical vapor deposition.