Grimm-Sommerfeld analogous II-IV-N nitrides such as ZnSiN , ZnGeN , and MgGeN are promising semiconductor materials for substitution of commonly used (Al,Ga,In)N. Herein, the ammonothermal synthesis of solid solutions of II-IV-N compounds (II=Mg, Mn, Zn; IV=Si, Ge) having the general formula (II II )-IV-N with x≈0.5 and ab initio DFT calculations of their electronic and optical properties are presented.
View Article and Find Full Text PDFRecently, a number of different structurally related nitrides characterized by pairs of edge-sharing Si-N tetrahedra forming [SiN] units have emerged via different synthesis methods. Concurrently, upon doping with rare earth elements (e.g.
View Article and Find Full Text PDFWe report on the structure and properties of the lithium oxonitridosilicate oxide LiSr[SiON]O:Eu obtained from solid-state metathesis. The crystal structure was solved and refined from single-crystal X-ray data in the space group P4/ nmc (No. 137) [ Z = 2, a = 7.
View Article and Find Full Text PDFThe phosphorus nitrides, Mg PN and Zn PN , are wide band gap semiconductor materials with potential for application in (opto)electronics or photovoltaics. For the first time, both compounds were synthesized ammonothermally in custom-built high-temperature, high-pressure autoclaves starting from P N and the corresponding metals (Mg or Zn). Alkali amides (NaNH , KNH ) were employed as ammonobasic mineralizers to increase solubility of the starting materials in supercritical ammonia through formation of reactive intermediates.
View Article and Find Full Text PDFBeryllate structures are marginally investigated, but show intriguing structural relations to oxo- and nitridosilicates. A typical feature is the coordination of Be in both trigonal planar and tetrahedral coordination by O. A broad range of structures is accessible by variable combinations of both building units.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
May 2018
Phosphorus oxonitride (PON) is isoelectronic with SiO and may exhibit a similar broad spectrum of intriguing properties as silica. However, PON has only been sparsely investigated under high-pressure conditions and there has been no evidence on a PON polymorph with a coordination number of P greater than 4. Herein, we report a post-coesite (pc) PON polymorph exhibiting a stishovite-related structure with P in a (5+1) coordination.
View Article and Find Full Text PDFGrimm-Sommerfeld analogous nitrides MgSiN , MgGeN , MnSiN , MnGeN , LiSi N and LiGe N (generally classified as II-IV-N and I-IV -N ) are promising semiconductor materials with great potential for application in (opto)electronics or photovoltaics. A new synthetic approach for these nitride materials was developed using supercritical ammonia as both solvent and nitride-forming agent. Syntheses were conducted in custom-built high-pressure autoclaves with alkali metal amides LiNH , NaNH or KNH as ammonobasic mineralizers, which accomplish an adequate solubility of the starting materials and promote the formation of reactive intermediate species.
View Article and Find Full Text PDFThe high-pressure polymorph Li P N of Li P N (="2 Li P N ") was synthesized by high-pressure/high-temperature reaction of LiPN and Li PN or β-Li P N at 9 GPa, using the Li N self-flux method in a Walker-type multianvil assembly. Li P N is the first lithium nitridophosphate with a layered structure and is made up of corner sharing PN tetrahedra forming a corrugated honeycomb-type layer of linked sechser-rings in chair conformation. The arrangement of the P atoms is analogous to that of black phosphorus.
View Article and Find Full Text PDFLi P N was synthesized by solid-state reaction of Li N and P N at 790 °C. It is made up of non-condensed [P N ] dreier-rings of PN -tetrahedra. The corresponding high-pressure polymorph, Li PN , was synthesized under high-pressure/high-temperature conditions from Li P N or LiPN and Li PN at 6 or 7 GPa, respectively, using the multianvil technique.
View Article and Find Full Text PDFWe report a detailed investigation of the electronic, mechanical and optical properties of the recently discovered nitridogallosilicate CaGaSiN which has potential as a LED-phosphor host material. We focus on chemical disorder effects, originating from the Ga/Si site, and compared them to those of isostructural CaAlSiN. We calculate the elastic moduli and the Debye temperature in terms of quasi harmonical approximation.
View Article and Find Full Text PDFThe first gallium-containing nitridosilicate CaGaSiN was synthesized in newly developed high-pressure autoclaves using supercritical ammonia as solvent and nitriding agent. The reaction was conducted in an ammonobasic environment starting from intermetallic CaGaSi with NaN as a mineralizer. At 770 K, intermediate compounds were obtained, which were subsequently converted to the crystalline nitride at temperatures up to 1070 K (70-150 MPa).
View Article and Find Full Text PDFHigh-pressure metathesis was proposed to be a gateway to the elusive class of rare-earth nitridophosphates. With this method the first ternary compounds of this class with sum formula RE2P3N7 were prepared, a melilite-type with RE = Pr, Nd, Sm, Eu, Ho, Yb (Ho2P3N7: P4̅21m, a = 7.3589(2), c = 4.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
March 2015
The chemical and physical properties of phosphorus oxonitride (PON) closely resemble those of silica, to which it is isosteric. A new high-pressure phase of PON is reported herein. This polymorph, synthesized by using the multianvil technique, crystallizes in the coesite structure.
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