Physical Properties of an Efficient MAPbBr/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors.

Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations.

Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (GaO) Thin Films.

Raman spectroscopy, a versatile and nondestructive technique, was employed to develop a methodology for gallium oxide (GaO) phase detection and identification. This methodology combines experimental results with a comprehensive literature survey. The established Raman approach offers a powerful tool for nondestructively assessing phase purity and detecting secondary phases in GaO thin films.

Structural and Photoelectronic Properties of κ-GaO Thin Films Grown on Polycrystalline Diamond Substrates.

Orthorhombic κ-GaO thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical microscopy, X-ray diffraction, current-voltage measurements, and spectral photoconductivity, respectively. Results show that a very slow cooling, performed at low pressure (100 mbar) under a controlled He flow soon after the growth process, is mandatory to improve the quality of the κ-GaO epitaxial thin film, ensuring a good adhesion to the diamond substrate, an optimal morphology, and a lower density of electrically active defects.

Interfacial Properties of the SnO/κ-GaO p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-GaO.

The interfacial properties of a planar SnO/κ-GaO p-n heterojunction have been investigated by capacitance-voltage (-) measurements following a methodological approach that allows consideration of significant combined series resistance and parallel leakage effects. Single-frequency measurements were carried out in both series- and parallel-model measurement configurations and then compared to the dual-frequency approach, which permits us to evaluate the depletion capacitance of diode independently of leakage conductance and series resistance. It was found that in the bias region, where the dissipation factor was low enough, they give the same results and provide reliable experimental - data.

Crystal Structure and Ferroelectric Properties of ε-GaO Films Grown on (0001)-Sapphire.

The crystal structure and ferroelectric properties of ε-GaO deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of GaO showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis.

Determination of traces of iron in indium phosphide by electrothermal atomic absorption spectrometry combined with solvent extraction.

An electrothermal atomic absorption (ETAAS) method for the determination of traces of iron (0.1-1.0 microgram g-1) in Fe-doped indium phosphide (InP) has been developed.