Obtaining of Mg-Zn Co-Doped GaN Powders via Nitridation of the Ga-Mg-Zn Metallic Solution and Their Structural and Optical Properties.

Mg-Zn co-dopedGaN powders via the nitridation of a Ga-Mg-Zn metallic solution at 1000 °C for 2 h in ammonia flow were obtained. XRD patterns for the Mg-Zn co-dopedGaN powders showed a crystal size average of 46.88 nm.

Isotherm Theoretical Study of the AlGaAsSb Quaternary Alloy Using the Regular Solution Approximation for Its Possible Growth via Liquid-Phase Epitaxy at Low Temperatures.

This work presents the theoretical calculation of isotherm diagrams for quaternary alloys of III-V semiconductor compounds with the form IIIIIIVV. In particular, the isotherm diagrams for the AlGaAsSb quaternary alloy at low temperatures were calculated (500 °C, 450 °C, 400 °C, and 350 °C). The AlGaAsSb quaternary alloy was formed from four binary compounds such as GaAs, AlAs, AlSb, and GaSb, all with direct bandgaps.