MnO/ZnO:Zn Thin-Film Frequency Adaptive Heterostructure for Future Sustainable Memristive Systems.

In recent years, advances in materials engineering based on adaptive electronics have found a new paradigm to optimize drawbacks in signal processing. A two-layer MnO/ZnO:Zn heterostructure envisioned for frequency adaptive electronic signal processing is synthesized by sputtering, where the use of internal states allows reconfigurability to obtain new operating modes at different frequency input signals. X-ray diffraction (XRD) analysis is performed on each layer, revealing a cubic structure for MnO and a hexagonal structure for ZnO:Zn with preferential growth in [111] and [002] directions, respectively.