Ultra-High Sensitive NO Gas Sensor Based on Tunable Polarity Transport in CVD-WS/IGZO p-N Heterojunction.

In this work, a thin-film transistor gas sensor based on the p-N heterojunction is fabricated by stacking chemical vapor deposition-grown tungsten disulfide (WS) with a sputtered indium-gallium-zinc-oxide (IGZO) film. To the best of our knowledge, the present device has the best NO gas sensor response compared to all the gas sensors based on transition-metal dichalcogenide materials. The gas-sensing response is investigated under different NO concentrations, adopting heterojunction device mode and transistor mode.