Epitaxial BaSnOthin films with low dislocation density grown on lattice matched LaInOsubstrates.

The use of LaInOwith (110) surface orientation was investigated as a novel orthorhombic substrate for the epitaxial growth of semiconducting BaSnOthin films. On the basis of reflection high-energy electron diffraction, energy dispersive x-ray analysis and inductively coupled plasma-optical emission spectrometry measurements, we revealed that slight Ba doping of LaInOcrystals is beneficial to stabilize the substrate surface, which facilitates the epitaxial growth of well-ordered BaSnOthin films by pulsed laser deposition. Fully strained BaSnOfilms without misfit dislocations found by means of transmission electron microscopy were achieved due to the negligible lattice mismatch between BaSnOfilm and Ba-doped LaInOsubstrate.