GaO-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics.

β-phase gallium oxide (GaO) is an emerging ultrawide bandgap (UWBG) semiconductor ( ∼ 4.8 eV), which promises generational improvements in the performance and manufacturing cost over today's commercial wide bandgap power electronics based on GaN and SiC. However, overheating has been identified as a major bottleneck to the performance and commercialization of GaO device technologies.

Thermal Conductivity of β-Phase GaO and (AlGa)O Heteroepitaxial Thin Films.

Heteroepitaxy of β-phase gallium oxide (β-GaO) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of (2̅01)-oriented β-GaO heteroepitaxial thin films were investigated. Unintentionally doped β-GaO thin films were grown on -plane sapphire substrates with off-axis angles of 0° and 6° toward ⟨112̅0⟩ via metal-organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition.