Character and Distribution of Geometrically Necessary Dislocations in Polycrystalline Tantalum.

Geometrically necessary dislocations (GNDs) play a key role in accommodating strain incompatibility between neighboring grains in polycrystalline materials. One critical step toward accurately capturing GNDs in deformation models involves studying the microstructural features that promote GND accumulation and the resulting character of GND fields. This study utilizes high-resolution electron backscatter diffraction to map GND populations in a large polycrystalline sample of pure tantalum, under simple tension.

Improved twin detection via tracking of individual Kikuchi band intensity of EBSD patterns.

Twin detection via EBSD can be particularly challenging due to the fine scale of certain twin types - for example, compression and double twins in Mg. Even when a grid of sufficient resolution is chosen to ensure scan points within the twins, the interaction volume of the electron beam often encapsulates a region that contains both the parent grain and the twin, confusing the twin identification process. The degradation of the EBSD pattern results in a lower image quality metric, which has long been used to imply potential twins.

Influence of Noise-Generating Factors on Cross-Correlation Electron Backscatter Diffraction (EBSD) Measurement of Geometrically Necessary Dislocations (GNDs).

Studies of dislocation density evolution are fundamental to improved understanding in various areas of deformation mechanics. Recent advances in cross-correlation techniques, applied to electron backscatter diffraction (EBSD) data have particularly shed light on geometrically necessary dislocation (GND) behavior. However, the framework is relatively computationally expensive-patterns are typically saved from the EBSD scan and analyzed offline.

Performance of Dynamically Simulated Reference Patterns for Cross-Correlation Electron Backscatter Diffraction.

High-resolution (or "cross-correlation") electron backscatter diffraction analysis (HR-EBSD) utilizes cross-correlation techniques to determine relative orientation and distortion of an experimental electron backscatter diffraction pattern with respect to a reference pattern. The integrity of absolute strain and tetragonality measurements of a standard Si/SiGe material have previously been analyzed using reference patterns produced by kinematical simulation. Although the results were promising, the noise levels were significantly higher for kinematically produced patterns, compared with real patterns taken from the Si region of the sample.