Publications by authors named "Robert Eilhardt"

Titanium nitride thin films are used as an electrode material in superconducting (SC) applications and in oxide electronics. By controlling the defect density in the TiN thin film, the electrical properties of the film can achieve low resistivities and a high critical temperature ( ) close to bulk values. Generally, low defect densities are achieved by stoichiometric growth and a low grain boundary density.

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Hafnium oxide plays an important role as a dielectric material in various thin-film electronic devices such as transistors and resistive or ferroelectric memory. The crystallographic and electronic structure of the hafnia layer often depends critically on its composition and defect structure. Here, we report two novel defect-stabilized polymorphs of substoichiometric HfO with semiconducting properties that are of particular interest for resistive switching digital or analog memory devices.

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The intrinsic stability of the 5 V LiCoPO-LiCoPO thin-film (carbon-free) cathode material coated with MoO thin layer is studied using a comprehensive synchrotron electron spectroscopy in situ approach combined with first-principle calculations. The atomic-molecular level study demonstrates fully reversible electronic properties of the cathode after the first electrochemical cycle. The polyanionic oxide is not involved in chemical reactions with the fluoroethylene-containing liquid electrolyte even when charged to 5.

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Utilizing the molecular beam epitaxy technique, a nanoscale thin-film magnet of -axis-oriented SmCo and SmCo phases is stabilized. While typically in the prototype Sm(Co, Fe, Cu, Zr) pinning-type magnets, an ordered nanocomposite is formed by complex thermal treatments, here, a one-step approach to induce controlled phase separation in a binary Sm-Co system is shown. A detailed analysis of the extended X-ray absorption fine structure confirmed the coexistence of SmCo and SmCo phases with 65% SmCo and 35% SmCo.

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