Publications by authors named "Robert B Kohlhaas"

Article Synopsis
  • Researchers developed new photoconductive, continuous wave THz detectors using rhodium-doped InGaAs that are excited by 1550 nm light.
  • Rh-doped InGaAs shows better carrier mobility compared to iron-doped materials, leading to a significant 10-fold increase in responsivity and noise-equivalent-power while keeping the same bandwidth.
  • The new detectors achieved a record peak dynamic range of 132 dB in a homodyne spectrometer setup, improving by 20 dB over previous technologies.
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For wireless networks beyond 5G, directivity and reconfigurability of antennas are highly relevant. Therefore, we propose a linear antenna array based on photodiodes operating at 300 GHz, and an optical phased array based on polymer waveguides to orchestrate the antennas. Due to its low thermal conductivity and high thermo-optical coefficient, the polymer chip enables highly efficient and crosstalk-free phase shifting.

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Electromagnetic waves in the terahertz (THz) frequency range are widely used in spectroscopy, imaging and sensing. However, commercial, table-top systems covering the entire frequency range from 100 GHz to 10 THz are not available today. Fiber-coupled spectrometers, which employ photoconductive antennas as emitters and receivers, show a bandwidth limited to 6.

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In future wireless communication networks at terahertz frequencies, the directivity and the beam profile of the emitters are highly relevant since no additional beam forming optics can be placed in free-space between the emitter and receiver. We investigated the radiation pattern and the polarization of broadband continuous-wave (cw) terahertz emitters experimentally and by numerical simulations between 100 GHz and 500 GHz. The emitters are indium phosphide (InP) photodiodes with attached planar antenna, mounted on a hyper-hemispherical silicon lens and integrated into a fiber-pigtailed module.

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Broadband terahertz spectroscopy enables many promising applications in science and industry alike. However, the complexity of existing terahertz systems has as yet prevented the breakthrough of this technology. In particular, established terahertz time-domain spectroscopy (TDS) schemes rely on complex femtosecond lasers and optical delay lines.

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We present a fiber coupled transceiver head for terahertz (THz) time-domain reflection measurements. The monolithically integrated transceiver chip is based on iron (Fe) doped InGaAs (InGaAs:Fe) grown by molecular beam epitaxy. Due to its ultrashort electron lifetime and high mobility, InGaAs:Fe is very well suited as both THz emitter and receiver.

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In this Letter, we report on photoconductive terahertz (THz) detectors for 1550 nm excitation based on a low-temperature-grown InGaAs/InAlAs superlattice with a localized beryllium doping profile. With this approach, we address the inherent lifetime-mobility trade-off that arises, since trapping centers also act as scattering sites for photo-excited electrons. The localized doping of the InAlAs barrier only leads to faster electron trapping for a given mobility.

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We present a fiber-coupled terahertz quasi time-domain spectroscopy system driven by a laser with a central wavelength of 1550 nm. By using a commercially available multimode laser diode in combination with state-of-the-art continuous wave antennas, a bandwidth of more than 1.8 THz is achieved.

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We present a fiber-coupled transceiver for THz time-domain spectroscopy, which combines an emitter and a receiver on a single photoconductive chip. With a bandwidth of 4.5 THz and a peak dynamic range larger than 70 dB, it allows for THz reflection measurements under normal incidence.

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