CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance.

The impending collapse of Moore-like growth of computational power has spurred the development of alternative computing architectures, such as optical or electro-optical computing. However, many of the current demonstrations in literature are not compatible with the dominant complementary metal-oxide semiconductor (CMOS) technology used in large-scale manufacturing today. Here, inspired by the famous Esaki diode demonstrating negative differential resistance (NDR), we show a fully CMOS-compatible electro-optical memory device, based on a new type of NDR diode.

MoSe/WS heterojunction photodiode integrated with a silicon nitride waveguide for near infrared light detection with high responsivity.

We demonstrate experimentally the realization and the characterization of a chip-scale integrated photodetector for the near-infrared spectral regime based on the integration of a MoSe/WS heterojunction on top of a silicon nitride waveguide. This configuration achieves high responsivity of ~1 A W at the wavelength of 780 nm (indicating an internal gain mechanism) while suppressing the dark current to the level of ~50 pA, much lower as compared to a reference sample of just MoSe without WS. We have measured the power spectral density of the dark current to be as low as ~1 × 10 A Hz, from which we extract the noise equivalent power (NEP) to be ~1 × 10 W Hz.

Role of surface passivation in integrated sub-bandgap silicon photodetection.

We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal.