Publications by authors named "Ritala M"

his study aimed to evaluate the effects of the atomic layer deposited hydroxyapatite (ALD-HA) coating of the titanium (Ti) surface on human gingival keratinocyte (HGK) cell adhesion, spreading, viability, and hemidesmosome (HD) formation. Grade 2 square-shaped Ti substrates were used ( = 62). Half of the substrates were ALD-HA coated, while the other half were used as non-coated controls (NC).

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Plasmonic catalysis has been employed to enhance molecular transformations under visible light excitation, leveraging the localized surface plasmon resonance (LSPR) in plasmonic nanoparticles. While plasmonic catalysis has been employed for accelerating reaction rates, achieving control over the reaction selectivity has remained a challenge. In addition, the incorporation of catalytic components into traditional plasmonic-catalytic antenna-reactor nanoparticles often leads to a decrease in optical absorption.

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The hydrogen evolution and nitrite reduction reactions are key to producing green hydrogen and ammonia. Antenna-reactor nanoparticles hold promise to improve the performances of these transformations under visible-light excitation, by combining plasmonic and catalytic materials. However, current materials involve compromising either on the catalytic activity or the plasmonic enhancement and also lack control of reaction selectivity.

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In this paper, we present an ALD process for ScF using Sc(thd) and NHF as precursors. This is the first material made by ALD that has a negative thermal expansion over a wide-temperature range. Crystalline films were obtained at the deposition temperatures of 250-375 °C, with a growth per cycle (GPC) increasing along the deposition temperature from 0.

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In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro(triethylphosphine)gold(I) [AuCl(PEt)] and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(MeGe)DHP]. High purity gold films were deposited on different substrate materials at 180 °C for the first time with thermal reductive ALD. The growth rate is 1.

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The present study describes atomic layer deposition (ALD) processes and characterization of CoF, NiF, and HoF thin films. For CoF deposition CoCl(TMEDA) (TMEDA = ,,','-tetramethylethylenediamine) and NHF were used as precursors. CoF deposition was studied at 180-275 °C, resulting in a growth per cycle (GPC) of 0.

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Atomic layer deposition processes with inherent substrate selectivity are more straightforward for area-selective atomic layer deposition (AS-ALD) than approaches using surface passivation or activation with self-assembled monolayers (SAMs), small molecule inhibitors (SMIs) or seed layers. Here, ALD of ZnS using elemental zinc and sulfur as precursors is reported to have excellent inherent selectivity. At 400-500 °C for 250 cycles, substantial ZnS growth was observed on Ti and TiO surfaces while no growth was measured on native SiO and AlO surfaces.

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Hydroxyapatite (HA; Ca(PO)(OH)) coating of bone implants has many beneficial properties as it improves osseointegration and eventually becomes degraded and replaced with new bone. We prepared HA coating on a titanium substrate with atomic layer deposition (ALD) and compared monocyte differentiation and material resorption between ALD-HA and bone. After stimulation with macrophage colony-stimulating factor (M-CSF) and receptor activator of nuclear factor kappa-B ligand (RANKL), human peripheral blood monocytes differentiated into resorbing osteoclasts on bovine bone, but non-resorbing foreign body cells were observed on ALD-HA.

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Article Synopsis
  • The paper explores the use of laboratory-scale X-ray absorption spectroscopy to study nanometer-scale thin films, focusing on CuI and CuO films produced through atomic layer deposition.
  • The researchers show that X-ray absorption near edge structure (XANES) spectra can be rapidly obtained from very thin films (down to 12 nm) in a matter of minutes, while extended X-ray absorption fine structure (EXAFS) data requires a few days.
  • An experiment demonstrating the oxidation of a thicker (248 nm) CuI film at 240 °C highlights the effectiveness of these methods for advancing inorganic thin film research.
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Selective deposition of hybrid and inorganic materials inside nanostructures could enable major nanotechnological advances. However, inserting ready-made composites inside nanocavities may be difficult, and therefore, stepwise approaches are needed. In this paper, a poly(ethyl acrylate) template is grown selectively inside cavities condensation-controlled toposelective vapor deposition, and the polymer is then hybridized by alumina, titania, or zinc oxide.

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Atomic layer deposition offers outstanding film uniformity and conformality on substrates with high aspect ratio features. These qualities are essential for mixed-halide perovskite films applied in tandem solar cells, transistors and light-emitting diodes. The optical and electronic properties of mixed-halide perovskites can be adjusted by adjusting the ratios of different halides.

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In this work, we developed a new ALD process for nickel metal from dichlorobis(triethylphosphine)nickel(II) (NiCl(PEt)) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine ((MeGe)DHP). A series of phosphine adducts of nickel and cobalt halides were synthesized and characterized for their volatility and thermal stability. Also (MeGe)DHP is a novel reducing agent in ALD.

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Background: The increasing demand for bone implants with improved osseointegration properties has prompted researchers to develop various coating types for metal implants. Atomic layer deposition (ALD) is a method for producing nanoscale coatings conformally on complex three-dimensional surfaces. We have prepared hydroxyapatite (HA) coating on titanium (Ti) substrate with the ALD method and analyzed the biocompatibility of this coating in terms of cell adhesion and viability.

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Nanoscale SnO has many important properties ranging from sorption of metal ions to gas sensing. Using a novel electroblowing method followed by calcination, we synthesized SnO and composite SnO/SiO submicron fibers with a Sn : Si molar ratio of 3 : 1. Different calcination temperatures and heating rates produced fibers with varying structures and morphologies.

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An ambient pressure cell is described for conducting synchrotron-based x-ray photoelectron spectroscopy (XPS) measurements during atomic layer deposition (ALD) processes. The instrument is capable of true in situ and operando experiments in which it is possible to directly obtain elemental and chemical information from the sample surface using XPS as the deposition process is ongoing. The setup is based on the ambient pressure XPS technique, in which sample environments with high pressure (several mbar) can be created without compromising the ultrahigh vacuum requirements needed for the operation of the spectrometer and the synchrotron beamline.

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CoS is an interesting sulfide material with metallic conductivity that has shown promise for various energy applications. Herein, we report a new atomic layer deposition process producing crystalline, pure, and highly conductive CoS thin films using CoCl(TMEDA) (TMEDA = ,,','-tetramethylethylenediamine) and HS as precursors at 180-300 °C. The lowest resistivity of 80 μΩ cm, best uniformity, and highest growth rate are achieved at 275 °C.

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Because of its high conductivity and intrinsic stability, poly(3,4-ethylenedioxythiophene (PEDOT) has gained great attention both in academic research and industry over the years. In this study, we used the oxidative molecular layer deposition (oMLD) technique to deposit PEDOT from 3,4-ethylenedioxythiophene (EDOT) and a new inorganic oxidizing agent, rhenium pentachloride (ReCl). We extensively characterized the properties of the films by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), Raman, and conductivity measurements.

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An experimental approach is described in which well-defined perturbations of the gas feed into an Ambient Pressure X-ray Photoelectron Spectroscopy (APXPS) cell are fully synchronized with the time-resolved x-ray photoelectron spectroscopy data acquisition. These experiments unlock new possibilities for investigating the properties of materials and chemical reactions mediated by their surfaces, such as those in heterogeneous catalysis, surface science, and coating/deposition applications. Implementation of this approach, which is termed perturbation-enhanced APXPS, at the SPECIES beamline of MAX IV Laboratory is discussed along with several experimental examples including individual pulses of N gas over a Au foil, a multi-pulse titration of oxygen vacancies in a pre-reduced TiO single crystal with O gas, and a sequence of alternating precursor pulses for atomic layer deposition of TiO on a silicon wafer substrate.

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High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline CuO semiconductor channel grown by atomic layer deposition (ALD).

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TiO and ZnO single and multilayers were deposited on hydroxyl functionalized multi-walled carbon nanotubes using atomic layer deposition. The bare carbon nanotubes and the resulting heterostructures were characterized by TG/DTA, Raman, XRD, SEM-EDX, XPS, TEM-EELS-SAED and low temperature nitrogen adsorption techniques, and their photocatalytic and gas sensing activities were also studied. The carbon nanotubes (CNTs) were uniformly covered with anatase TiO and wurtzite ZnO layers and with their combinations.

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Amorphous SiO-NbO nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OCH), Si(NHCH), and O to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.

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Both stable and radioactive antimony are common industrial pollutants. For antimonate (Sb(v)) removal from industrial waste water, we synthesized submicron zirconium dioxide (ZrO) fibers by electroblowing and calcination of the as-electroblown fibers. The fibers are amorphous after calcination at 300 and 400 °C and their average diameter is 720 nm.

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Herein, we report an atomic layer deposition (ALD) process for CuO thin films using copper(II) acetate [Cu(OAc)] and water vapor as precursors. This precursor combination enables the deposition of phase-pure, polycrystalline, and impurity-free CuO thin films at temperatures of 180-220 °C. The deposition of Cu(I) oxide films from a Cu(II) precursor without the use of a reducing agent is explained by the thermally induced reduction of Cu(OAc) to the volatile copper(I) acetate, CuOAc.

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Mesoporous and large surface area zirconium oxide aggregate granules with good adsorption properties were synthesized using a simple precipitation method. Since utilization of these small and fragile particles is considered rather difficult in larger scale column operation, the product was formed into a fibrous form to improve its usability. The submicron fibers were obtained from an optimized electroblowing synthesis that resulted in elastic and uniform fibers with a tetragonal structure and high length-to-diameter ratio.

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