Conformity Experiment on Inelastic Scattering Exponent of Electrons in Two Dimensions.

The quantum Hall (QH) effect is one of the most widely studied physical phenomenon in two dimensions. The plateau-plateau transition within this effect can be comprehensively described by the scaling theory, which encompasses three pivotal exponents: the critical exponent κ, the inelastic scattering exponent p, and the universal exponent γ. Prior studies have focused on measuring κ and estimating γ, assuming a constant p value of 2 across magnetic fields.

Graphene-Based Analog of Single-Slit Electron Diffraction.

This work reports the experimental demonstration of single-slit diffraction exhibited by electrons propagating in encapsulated graphene with an effective de Broglie wavelength corresponding to their attributes as massless Dirac fermions. Nanometer-scale device designs were implemented to fabricate a single-slit followed by five detector paths. Predictive calculations were also utilized to readily understand the observations reported.

Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots.

The Hubbard model is an essential tool for understanding many-body physics in condensed matter systems. Artificial lattices of dopants in silicon are a promising method for the analog quantum simulation of extended Fermi-Hubbard Hamiltonians in the strong interaction regime. However, complex atom-based device fabrication requirements have meant emulating a tunable two-dimensional Fermi-Hubbard Hamiltonian in silicon has not been achieved.

Computational Methods for Charge Density Waves in 2D Materials.

Two-dimensional (2D) materials that exhibit charge density waves (CDWs)-spontaneous reorganization of their electrons into a periodic modulation-have generated many research endeavors in the hopes of employing their exotic properties for various quantum-based technologies. Early investigations surrounding CDWs were mostly focused on bulk materials. However, applications for quantum devices require few-layer materials to fully utilize the emergent phenomena.

A Josephson junction with-BN tunnel barrier: observation of low critical current noise.

Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconducting Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions.

Thermoelectric transport in coupled double layers with interlayer excitons and exciton condensation.

Quantum Boltzmann formalism is employed to study the transport properties of strongly-coupled double layer systems that enable the formation of interlayer excitons and exciton condensation. The importance of exciton formation, dissociation, and condensation is highlighted in the context of thermoelectric power generation, and this mathematical inquiry provides an alternative methodology to calculate the thermoelectric efficiency given the conditions of exciton formation. The Onsager relation for the Coulomb drag resistivity is shown to be valid even when exciton condensation is present.

Turn of the decade: versatility of 2D hexagonal boron nitride.

The era of two-dimensional (2D) materials, in its current form, truly began at the time that graphene was first isolated just over 15 years ago. Shortly thereafter, the use of 2D hexagonal boron nitride (BN) had expanded in popularity, with use of the thin isolator permeating a significant number of fields in condensed matter and beyond. Due to the impractical nature of cataloguing every use or research pursuit, this review will cover ground in the following three subtopics relevant to this versatile material: growth, electrical measurements, and applications in optics and photonics.

Abrikosov vortex corrections to effective magnetic field enhancement in epitaxial graphene.

Here, we report the effects of enhanced magnetic fields resulting from type-II superconducting NbTiN slabs adjacent to narrow Hall bar devices fabricated from epitaxial graphene. Observed changes in the magnetoresistances were found to have minimal contributions from device inhomogeneities, magnet hysteresis, electron density variations along the devices, and transient phenomena. We hypothesize that Abrikosov vortices, present in type-II superconductors, contribute to these observations.

Graphene quantum Hall effect parallel resistance arrays.

As first recognized in 2010, epitaxial graphene on SiC(0001) provides a platform for quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures and materials. Here we report graphene parallel QHR arrays, with metrologically precise quantization near 1000 Ω. These arrays have tunable carrier densities, due to uniform epitaxial growth and chemical functionalization, allowing quantization at the robust = 2 filling factor in array devices at relative precision better than 10.

Examining Experimental Raman Mode Behavior in Mono- and Bilayer 2H-TaSe via Density Functional Theory: Implications for Quantum Information Science.

Tantalum diselenide (TaSe) is a metallic transition metal dichalcogenide whose structure and vibrational behavior strongly depend on temperature and thickness, and this behavior includes the emergence of charge density wave (CDW) states at very low temperatures. In this work, observed Raman modes for mono- and bilayer are described across several spectral regions and compared to those seen in the bulk case. These modes, which include an experimentally observed forbidden Raman mode and low-frequency CDWs, are then matched to corresponding vibrations predicted by density functional theory (DFT).

Graphene Quantum Hall Effect Devices for AC and DC Electrical Metrology.

A new type of graphene-based quantum Hall standards is tested for electrical quantum metrology applications at alternating current (ac) and direct current (dc). The devices are functionalized with Cr(CO) to control the charge carrier density and have branched Hall contacts based on NbTiN superconducting material. The work is an in-depth study about the characteristic capacitances and related losses in the ac regime of the devices and about their performance during precision resistance measurements at dc and ac.

Onsager-Casimir frustration from resistance anisotropy in graphene quantum Hall devices.

We report on nonreciprocity observations in several configurations of graphene-based quantum Hall devices. Two distinct measurement configurations were adopted to verify the universality of the observations (i.e.

Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe.

A graphene quantized Hall resistance (QHR) device fabricated at the National Institute of Standards and Technology (NIST) was measured alongside a GaAs QHR device fabricated by the National Research Council of Canada (NRC) by comparing them to a 1 kΩ standard resistor using a cryogenic current comparator. The two devices were mounted in a custom developed dual probe that was then assessed for its viability as a suitable apparatus for precision measurements. The charge carrier density of the graphene device exhibited controllable tunability when annealed after Cr(CO) functionalization.

Superconducting Contact Geometries for Next-Generation Quantized Hall Resistance Standards.

Precision quantum Hall resistance measurements can be greatly improved when implementing new electrical contact geometries made from superconducting NbTiN. The sample designs described here minimize undesired resistances at contacts and interconnections, enabling further enhancement of device size and complexity when pursuing next-generation quantized Hall resistance devices.

Metrological Suitability of Functionalized Epitaxial Graphene.

This work presents one solution for long-term storage of epitaxial graphene (EG) in air, namely through the functionalization of millimeter-scale devices with chromium tricarbonyl - Cr(CO). The carrier density may be tuned reproducibly by annealing below 400 K due to the presence of Cr(CO). All tuning is easily reversible with exposure to air, with the idle, in-air, carrier density always being close to the Dirac point.

Development of gateless quantum Hall checkerboard junction devices.

Measurements of fractional multiples of the = 2 plateau quantized Hall resistance ( ≈ 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space within which these devices could operate.

Analytical determination of atypical quantized resistances in graphene junctions.

A mathematical approach is introduced for predicting quantized resistances in graphene junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield nonconventional, fractional multiples of the typical quantized Hall resistance at the = 2 plateau ( ≈ 12906 Ω) and take the form: . This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected.

Analysing quantized resistance behaviour in graphene Corbino junction devices.

Just a few of the promising applications of graphene Corbino J devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 μA to be compatible with existing infrastructure. However, fabrication of these devices still poses many difficulties.

Advanced Temperature-Control Chamber for Resistance Standards.

Calibration services for resistance metrology have continued to advance their capabilities and establish new and improved methods for maintaining standard resistors. Despite the high quality of these methods, there still exist inherent limitations to the number of simultaneous, measurable resistors and the temperature stability of their air environment. In that context, we report progress on the design, development, and initial testing of a precise temperature-control chamber for standard resistors that can provide a constant-temperature environment with a stability of ± 6 m°C.

Implementation of a graphene quantum Hall Kelvin bridge-on-a-chip for resistance calibrations.

The unique properties of the quantum Hall effect allow one to revisit traditional measurement circuits with a new flavour. In this paper we present the first realization of a quantum Hall Kelvin bridge for the calibration of standard resistors directly against the quantum Hall resistance. The bridge design is particularly simple and requires a minimal number of instruments.

Dielectric Properties of NbWSe Alloys.

The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe and WSe, followed by an optical analysis of those alloys by utilizing Raman spectroscopy and spectroscopic ellipsometry.

Phonon origin and lattice evolution in charge density wave states.

Metallic transition metal dichalcogenides, such as tantalum diselenide (TaSe2), display quantum correlated phenomena of superconductivity and charge density waves (CDW) at low temperatures. Here, the photophysics of 2H-TaSe during CDW transitions is revealed by combining temperature-dependent, low-frequency Raman spectroscopy and density functional theory (DFT). The spectra contain amplitude, phase, and zone-folded modes that are assigned to specific phonons and lattice restructuring predicted by DFT calculations with superb agreement.