Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study.

Since its invention in the 1960s, one of the most significant evolutions of metal-oxide semiconductor field effect transistors (MOSFETs) would be the 3D version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During recent decades, the width of fin (W) and the neighboring gate oxide width (t) in FinFETs has shrunk from about 150 nm to a few nanometers. However, both widths seem to have been leveling off in recent years, owing to the limitation of lithography precision.

Highly efficient inverted organic light emitting diodes by inserting a zinc oxide/polyethyleneimine (ZnO:PEI) nano-composite interfacial layer.

The electrode/organic interface is one of the key factors in attaining superior device performance in organic electronics, and inserting a tailor-made layer can dramatically modify its properties. The use of nano-composite (NC) materials leads to many advantages by combining materials with the objective of obtaining a desirable combination of properties. In this context, zinc oxide/polyethyleneimine (ZnO:PEI) NC film was incorporated as an interfacial layer into inverted bottom-emission organic light emitting diodes (IBOLEDs) and fully optimized.