A Flexible -SiC-Based Neural Interface Utilizing Pyrolyzed-Photoresist Film (C) Active Sites.

Carbon containing materials, such as graphene, carbon-nanotubes (CNT), and graphene oxide, have gained prominence as possible electrodes in implantable neural interfaces due to their excellent conductive properties. While carbon is a promising electrochemical interface, many fabrication processes are difficult to perform, leading to issues with large scale device production and overall repeatability. Here we demonstrate that carbon electrodes and traces constructed from pyrolyzed-photoresist-film (PPF) when combined with amorphous silicon carbide (SiC) insulation could be fabricated with repeatable processes which use tools easily available in most semiconductor facilities.

Correction: Bernardin E.K.; et al. Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface. Micromachines, 2018, 9, 412.

The authors would like to indicate the following financial support they received to the Acknowledgement Section of their published paper [...

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface.

Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor.