Small signal modulation of photonic crystal surface emitting lasers.

We report the small-signal characterization of a PCSEL device, extracting damping factors and modulation efficiencies, and demonstrating -3 dB modulation bandwidths of up to 4.26 GHz. Based on modelling we show that, by reducing the device width and improving the active region design for high-speed modulation, direct modulation frequencies in excess of 50 GHz are achievable.

Increase in terahertz-wave intensity in a magnetic field due to difference-frequency mixing by exciton excitation in a GaAs/AlAs multiple quantum well.

Magnetic fields can increase the intensity of terahertz (THz) waves due to changing the dipole moment direction using the Lorentz force. This study reports the increase in the THz-wave intensity generated by differential frequency mixing using commercial permanent magnets under exciton-excitation. While a weak magnetic field applied to a multiple quantum well increases the THz-wave intensity due to excitons, a strong field causes its decrease.

CuO-Based Electrochemical Biosensor for Non-Invasive and Portable Glucose Detection.

Electrochemical voltammetric sensors are some of the most promising types of sensors for monitoring various physiological analytes due to their implementation as non-invasive and portable devices. Advantages in reduced analysis time, cost-effectiveness, selective sensing, and simple techniques with low-powered circuits distinguish voltammetric sensors from other methods. In this work, we developed a CuO-based non-enzymatic portable glucose sensor on a graphene paste printed on cellulose cloth.

Increase in terahertz-wave generation by difference frequency mixing by the overlap of exciton states in different GaAs/AlAs quantum wells and spectroscopic measurements.

Intense terahertz-wave emission in the higher frequency region can result in various applications such as terahertz spectroscopy and ultrafast data communication. In this study, an increase in terahertz waves by the overlap of exciton states in different quantum wells and spectroscopic demonstration are reported. The excitation energy dependence of signal intensity shows the effect of the overlap.

Near-infrared and mid-infrared semiconductor broadband light emitters.

Semiconductor broadband light emitters have emerged as ideal and vital light sources for a range of biomedical sensing/imaging applications, especially for optical coherence tomography systems. Although near-infrared broadband light emitters have found increasingly wide utilization in these imaging applications, the requirement to simultaneously achieve both a high spectral bandwidth and output power is still challenging for such devices. Owing to the relatively weak amplified spontaneous emission, as a consequence of the very short non-radiative carrier lifetime of the inter-subband transitions in quantum cascade structures, it is even more challenging to obtain desirable mid-infrared broadband light emitters.

Optical characterization of In-flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm.

We investigated optical properties of In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam epitaxy. By using the In-flush technique for setting the height of self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μm regime, which can be utilized as a non-invasive and deeply penetrative probe for biological and medical imaging systems. The controlled emission exhibited a broadband spectrum comprising multiple peaks with an interval of approximately 30 meV.