Formation of Type II Silicon Clathrate with Lithium Guests through Thermal Diffusion.

At low guest atom concentrations, Si clathrates can be viewed as semiconductors, with the guest atoms acting as dopants, potentially creating alternatives to diamond Si with exciting optoelectronic and spin properties. Studying Si clathrates with different guest atoms would not only provide insights into the electronic structure of the Si clathrates but also give insights into the unique properties that each guest can bring to the Si clathrate structure. However, the synthesis of Si clathrates with guests other than Na is challenging.

Investigation of the Changes in Electronic Properties of Nickel Oxide (NiO) Due to UV/Ozone Treatment.

Drastic reduction in nickel oxide (NiO) film resistivity and ionization potential is observed when subjected to ultraviolet (UV)/ozone (O) treatment. X-ray photoemission spectroscopy suggests that UV/O treatment changes the film stoichiometry by introducing Ni vacancy defects. Oxygen-rich NiO having Ni vacancy defects behaves as a p-type semiconductor.

Molecular Design for Tuning Work Functions of Transparent Conducting Electrodes.

In this Perspective, we provide a brief background on the use of aromatic phosphonic acid modifiers for tuning work functions of transparent conducting oxides, for example, zinc oxide (ZnO) and indium tin oxide (ITO). We then introduce our preliminary results in this area using conjugated phosphonic acid molecules, having a substantially larger range of dipole moments than their unconjugated analogues, leading to the tuning of ZnO and ITO electrodes over a 2 eV range as derived from Kelvin probe measurements. We have found that these work function changes are directly correlated to the magnitude and the direction of the computationally derived molecular dipole of the conjugated phosphonic acids, leading to the predictive power of computation to drive the synthesis of new and improved phosphonic acid ligands.

Conjugated phosphonic acid modified zinc oxide electron transport layers for improved performance in organic solar cells.

Phosphonic acid modification of zinc oxide (ZnO) electron transport layers in inverted P3HT:ICBA solar cells was studied to determine the effect of conjugated linkages between the aromatic and phosphonic acid attachment groups. For example, zinc oxide treated with 2,6-difluorophenylvinylphosphonic acid, having a conjugated vinyl group connecting the aromatic moiety to the phosphonic acid group, showed a 0.78 eV decrease in the effective work function versus unmodified ZnO, whereas nonconjugated 2,6-difluorophenylethylphosphonic acid resulted in a 0.

Ultrafast Electrical Measurements of Isolated Silicon Nanowires and Nanocrystals.

We simultaneously determined the charge carrier mobility and picosecond to nanosecond carrier dynamics of isolated silicon nanowires (Si NWs) and nanocrystals (Si NCs) using time-resolved terahertz spectroscopy. We then compared these results to data measured on bulk c-Si as a function of excitation fluence. We find >1 ns carrier lifetimes in Si NWs that are dominated by surface recombination with surface recombination velocities (SRV) between ∼1100-1700 cm s(-1) depending on process conditions.

Optimal size regime for oxidation-resistant silicon quantum dots.

First-principles computations have been carried out to predict that appropriately terminated silicon quantum dots with diameters in the range of 1.2-2 nm will offer a superb resistance to oxidation. This is because surface treatments can produce dangling bond defect densities sufficiently low that dots of this size are unlikely to have any defect at all.