An assessment on the new impetus of green energy development and its impact on climate change: a non-linear perspective.

The purpose of this article is to investigate the new driving forces behind China's green energy and further assess the impact of green energy on climate change. The existing literature has used linear methods to investigate green energy, ignoring the non-linear relationships between economic variables. The nonparametric models can accurately simulate nonlinear relationships between economic variables.

Contrastive pre-training and linear interaction attention-based transformer for universal medical reports generation.

Interpreting medical images such as chest X-ray images and retina images is an essential step for diagnosing and treating relevant diseases. Proposing automatic and reliable medical report generation systems can reduce the time-consuming workload, improve efficiencies of clinical workflows, and decrease practical variations between different clinical professionals. Many recent approaches based on image-encoder and language-decoder structure have been proposed to tackle this task.

Prospects and applications of on-chip lasers.

Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers.

Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature.

The large-area synthesis of high-quality MoS plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)-grown MoS require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high-quality monolayer MoS with the domain size up to 120 µm by metal-organic CVD (MOCVD) at a temperature of 320 °C is reported.

Vertical MoS Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV.

Atomically thin two-dimensional (2D) materials-such as transition metal dichalcogenide (TMD) monolayers and hexagonal boron nitride (hBN)-and their van der Waals layered preparations have been actively researched to build electronic devices such as field-effect transistors, junction diodes, tunneling devices, and, more recently, memristors. Two-dimensional material memristors built in lateral form, with horizontal placement of electrodes and the 2D material layers, have provided an intriguing window into the motions of ions along the atomically thin layers. On the other hand, 2D material memristors built in vertical form with top and bottom electrodes sandwiching 2D material layers may provide opportunities to explore the extreme of the memristive performance with the atomic-scale interelectrode distance.

Exciton Brightening in Monolayer Phosphorene via Dimensionality Modification.

Exciton brightening in monolayer phosphorene is achieved via the dimensionality modification of excitons from quasi-1D to 0D. The luminescence quantum yield of 0D-like excitons is >33.6 times larger than that of quasi-1D free excitons.

Atomically thin optical lenses and gratings.

Two-dimensional (2D) materials have emerged as promising candidates for miniaturized optoelectronic devices due to their strong inelastic interactions with light. On the other hand, a miniaturized optical system also requires strong elastic light-matter interactions to control the flow of light. Here we report that a single-layer molybdenum disulfide (MoS) has a giant optical path length (OPL), around one order of magnitude larger than that from a single-layer of graphene.

Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors.

We report a trion (charged exciton) binding energy of ∼162 meV in few-layer phosphorene at room temperature, which is nearly 1-2 orders of magnitude larger than those in two-dimensional (2D) transition metal dichalcogenide semiconductors (20-30 meV) and quasi-2D quantum wells (∼1-5 meV). Such a large binding energy has only been observed in truly one-dimensional (1D) materials such as carbon nanotubes, whose optoelectronic applications have been severely hindered by their intrinsically small optical cross sections. Phosphorene offers an elegant way to overcome this hurdle by enabling quasi-1D excitonic and trionic behaviors in a large 2D area, allowing optoelectronic integration.

Exciton and Trion Dynamics in Bilayer MoS2.

The control of exciton and triondynamics in bilayer MoS2 is demonstrated, via the comodulations by both temperature and electric field. The calculations here show that the band structure of bilayer MoS2 changes from indirect at room temperature toward direct nature as temperature decreases, which enables the electrical tunability of the K-K direct PL transition in bilayer MoS2 at low temperature.

Layer-dependent surface potential of phosphorene and anisotropic/layer-dependent charge transfer in phosphorene-gold hybrid systems.

The surface potential and the efficiency of interfacial charge transfer are extremely important for designing future semiconductor devices based on the emerging two-dimensional (2D) phosphorene. Here, we directly measured the strong layer-dependent surface potential of mono- and few-layered phosphorene on gold, which is consistent with the reported theoretical prediction. At the same time, we used an optical way photoluminescence (PL) spectroscopy to probe charge transfer in the phosphorene-gold hybrid system.

Extraordinary photoluminescence and strong temperature/angle-dependent Raman responses in few-layer phosphorene.

Phosphorene is a new family member of two-dimensional materials. We observed strong and highly layer-dependent photoluminescence in few-layer phosphorene (two to five layers). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap.