HfO-based ferroelectric thin film and memory device applications in the post-Moore era: A review.

The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently required for novel non-volatile memory devices with low power consumption, fast read/write speed, and high reliability, which are crucial for high-performance computing. Ferroelectric memory has undergone extensive investigation as a viable alternative for commercial applications since the post-Moore era. However, conventional perovskite-structure ferroelectrics (e.

Flexoelectric Domain Walls Originated from Structural Phase Transition in Epitaxial BiVO Films.

Polar domain walls in centrosymmetric ferroelastics induce inhomogeneity that is the origin of advantageous multifunctionality. In particular, polar domain walls promote charge-carrier separation and hence are promising for energy conversion applications that overcome the hurdles of the rate-limiting step in the traditional photoelectrochemical water splitting processes. Yet, while macroscopic studies investigate the materials at the device scale, the origin of this phenomenon in general and the emergence of polar domain walls during the structural phase transition in particular has remained elusive, encumbering the development of this attractive system.

The role of lattice dynamics in ferroelectric switching.

Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO films, to large (10's of micrometers) 180° domains in freestanding films.

Phase transition enhanced superior elasticity in freestanding single-crystalline multiferroic BiFeO membranes.

The integration of ferroic oxide thin films into advanced flexible electronics will bring multifunctionality beyond organic and metallic materials. However, it is challenging to achieve high flexibility in single-crystalline ferroic oxides that is considerable to organic or metallic materials. Here, we demonstrate the superior flexibility of freestanding single-crystalline BiFeO membranes, which are typical multiferroic materials with multifunctionality.

Deterministic reversal of single magnetic vortex circulation by an electric field.

The ability to control magnetic vortex is critical for their potential applications in spintronic devices. Traditional methods including magnetic field, spin-polarized current etc. have been used to flip the core and/or reverse circulation of vortex.

Interfacial Coupling Boosts Giant Electrocaloric Effects in Relaxor Polymer Nanocomposites: In Situ Characterization and Phase-Field Simulation.

The electrocaloric effect (ECE) refers to reversible thermal changes of a polarizable material upon the application or removal of electric fields. Without a compressor or cooling agents, all-solid-state electrocaloric (EC) refrigeration systems are environmentally benign, highly compact, and of very high energy efficiency. Relaxor ferroelectric ceramics and polymers are promising candidates as EC materials.

Publisher Correction: Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls.

In the version of this Article originally published, the corresponding author names in the author list appeared in the reverse order; they should have read 'Jinxing Zhang and Ce-Wan Nan'. The order of these authors' initials in the 'Correspondence and requests for materials' statement were similarly affected. These errors have now been corrected in all versions of the Article.

Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls.

Charged domain walls in ferroelectrics exhibit a quasi-two-dimensional conduction path coupled to the surrounding polarization. They have been proposed for use as non-volatile memory with non-destructive operation and ultralow energy consumption. Yet the evolution of domain walls during polarization switching makes it challenging to control their location and conductance precisely, a prerequisite for controlled read-write schemes and for integration in scalable memory devices.

Fast 180° magnetization switching in a strain-mediated multiferroic heterostructure driven by a voltage.

Voltage-driven 180° magnetization switching provides a low-power alternative to current-driven magnetization switching widely used in spintronic devices. Here we computationally demonstrate a promising route to achieve voltage-driven in-plane 180° magnetization switching in a strain-mediated multiferroic heterostructure (e.g.

Angular Dependence of Exchange Bias and Magnetization Reversal Controlled by Electric-Field-Induced Competing Anisotropies.

The combination of exchange-biased systems and ferroelectric materials offers a simple and effective way to investigate the angular dependence of exchange bias using one sample with electric-field-induced competing anisotropies. A reversible electric-field-controlled magnetization reversal at zero magnetic field is also realized through optimizing the anisotropy configuration, holding promising applications for ultralow power magnetoelectric devices.

Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures.

Voltage controlled 180° magnetization reversal has been achieved in BiFeO3-based multiferroic heterostructures, which is promising for the future development of low-power spintronic devices. However, all existing reports involve the use of an in-plane voltage that is unfavorable for practical device applications. Here, we investigate, using phase-field simulations, the out-of-plane (i.

Non-volatile 180° magnetization reversal by an electric field in multiferroic heterostructures.

The deterministic rotation of magnetization by electric fields is a challenging issue for future low-power spintronics. In a Co/0.7Pb(Mg1/3Nb2/3)O3-0.