Electrical and optical evaluation of n-type doping in In GaP nanowires.

To harvest the benefits of III-V nanowires in optoelectronic devices, the development of ternary materials with controlled doping is needed. In this work, we performed a systematic study of n-type dopant incorporation in dense In GaP nanowire arrays using tetraethyl tin (TESn) and hydrogen sulfide (HS) as dopant precursors. The morphology, crystal structure and material composition of the nanowires were characterized by use of scanning electron microscopy, transmission electron microscopy and energy dispersive x-ray analysis.