Tuneable 2D surface Bismuth incorporation on InAs nanosheets.

The chemical bonding at the interface between compound semiconductors and metals is central in determining electronic and optical properties. In this study, new opportunities for controlling this are presented for nanostructures. We investigate Bi adsorption on 2D wurtzite InAs (112̄0) nanosheets and find that temperature-controlled Bi incorporation in either anionic- or cationic-like bonding is possible in the easily accesible range between room temperature and 400 °C.