Low connector-to-connector loss through silicon photonic chips using ultra-low loss splicing of SMF-28 to high numerical aperture fibers.

Here we present extremely low connector-to-connector loss (≤3 dB) through silicon photonic chips using ultra-low loss (≤0.15 dB) splicing between SMF-28 and ultra-high numerical aperture (UHNA) fibers. The small MFD from the UHNA fibers enables strong coupling to hybrid TE/TM edge couplers achieving TM (TE) losses of 1.

Thermal radiation control from hot graphene electrons coupled to a photonic crystal nanocavity.

Controlling thermal radiation is central in a range of applications including sensing, energy harvesting, and lighting. The thermal emission spectrum can be strongly modified through the electromagnetic local density of states (EM LDOS) in nanoscale-patterned metals and semiconductors. However, these materials become unstable at high temperature, preventing improvements in radiative efficiency and applications such as thermophotovoltaics.

Fast thermal relaxation in cavity-coupled graphene bolometers with a Johnson noise read-out.

High sensitivity, fast response time and strong light absorption are the most important metrics for infrared sensing and imaging. The trade-off between these characteristics remains the primary challenge in bolometry. Graphene with its unique combination of a record small electronic heat capacity and a weak electron-phonon coupling has emerged as a sensitive bolometric medium that allows for high intrinsic bandwidths.

Ultrafast Graphene Light Emitters.

Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge.

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride.

High-resolution optical spectroscopy using multimode interference in a compact tapered fibre.

Optical spectroscopy is a fundamental tool in numerous areas of science and technology. Much effort has focused on miniaturizing spectrometers, but thus far at the cost of spectral resolution and broad operating range. Here we describe a compact spectrometer that achieves both high spectral resolution and broad bandwidth.

Photonic crystal cavity-assisted upconversion infrared photodetector.

We describe an upconversion infrared photodetector assisted by a gallium phosphide photonic crystal nanocavity directly coupled to a silicon photodiode. The strongly cavity-enhanced second harmonic signal radiating from the gallium phosphide membrane can thus be efficiently collected by the silicon photodiode, which promises a high photoresponsivity of the upconversion detector as 0.81 A/W with the coupled power of 1W.

High-speed electro-optic modulator integrated with graphene-boron nitride heterostructure and photonic crystal nanocavity.

Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.5-11 However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials.

Controlling the spontaneous emission rate of monolayer MoS in a photonic crystal nanocavity.

We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) mapping shows strong variations of emission when the MoS monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of the MoS SE rate exceeding a factor of 70.

Revealing anisotropic strain in exfoliated graphene by polarized Raman spectroscopy.

We report on a polarized Raman study on mechanically cleaved single-layer graphene films. Under a specific orientation of scattering measurement, the width and position of the G peak change with the incident polarization direction, while the integrated intensity of that is unaltered. This phenomenon is explained by a proposed mode in which the peak is contributed by a mixture of un-, compressive-, and tensile-strained G sub-modes.

High-contrast electrooptic modulation of a photonic crystal nanocavity by electrical gating of graphene.

We demonstrate high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A silicon air-slot nanocavity provides strong overlap between the resonant optical field and graphene. Tuning the Fermi energy of the graphene layer to 0.

Layer-dependent morphologies of silver on n-layer graphene.

The distributions of sizes of silver nanoparticles that were deposited on monolayer, bilayer, and trilayer graphene films were observed. Deposition was carried out by thermal evaporation and the graphene films, placed on SiO2/Si substrates, were obtained by the mechanical splitting of graphite. Before the deposition, optical microscopy and Raman spectroscopy were utilized to identify the number of the graphene layers.

Transport/magnetotransport of high-performance graphene transistors on organic molecule-functionalized substrates.

In this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices on OTS SAM-functionalized substrates with high carrier mobility, low intrinsic doping, suppressed carrier scattering, and reduced thermal activation of resistivity at room temperature were observed. Most interestingly, the remarkable magnetotransport of graphene devices with pronounced quantum Hall effect, strong Shubnikov-de Haas oscillations, a nonzero Berry's phase, and a short carrier scattering time also confirms the high quality of graphene on this ultrasmooth organic SAM-modified platform.

High-quality graphene p-n junctions via resist-free fabrication and solution-based noncovalent functionalization.

An essential issue in graphene nanoelectronics is to engineer the carrier type and density and still preserve the unique band structure of graphene. We report the realization of high-quality graphene p-n junctions by noncovalent chemical functionalization. A generic scheme for the graphene p-n junction fabrication is established by combining the resist-free approach and spatially selective chemical modification process.