Publications by authors named "Remi Demoulin"

Article Synopsis
  • Controlling ultrafast material transformations is crucial for advancing nanotechnology, and pulsed laser annealing (LA) is a key method for achieving rapid phase transitions in materials.
  • A new multiscale LA computational framework allows for atom-by-atom simulations of material kinetics during laser interactions, integrating both macroscopic and nanoscale approaches.
  • The study focuses on the effects of laser annealing on SiGe alloys and validates the framework against experimental data, emphasizing the significance of combining atomistic and continuum methods for improving material quality and understanding complex transformations.
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Atom probe tomography (APT) is a powerful three-dimensional nanoanalyzing microscopy technique considered key in modern materials science. However, progress in the spatial reconstruction of APT data has been rather limited since the first implementation of the protocol proposed by Bas et al. in 1995.

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We present the experimental realization of plasmonic hyperdoped Si nanocrystals embedded in silica a combination of sequential low energy ion implantation and rapid thermal annealing. We show that phosphorus dopants are incorporated into the nanocrystal cores at concentrations up to six times higher than P solid solubility in bulk Si by combining 3D mapping with atom probe tomography and analytical transmission electron microscopy. We shed light on the origin of nanocrystal growth at high P doses, which we attribute to Si recoiling atoms generated in the matrix by P implantation, which likely increase Si diffusivity and feed the Si nanocrystals.

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Using localized surface plasmon resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.

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This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO multilayers. Doped SiO/SiO multilayers with different P contents have been prepared by co-evaporation and subsequently annealed at different temperatures up to 1100 °C. The sample structure and the localization of P atoms were both studied at the nanoscale by scanning transmission electron microscopy and atom probe tomography.

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