Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C.

We demonstrate direct modulation of an InAs/GaAs quantum dot (QD) laser on Si. A Fabry-Pérot QD laser was integrated on Si by an ultraviolet-activated direct bonding method, and a cavity was formed using cleaved facets without HR/AR coatings. The bonded laser was operated under continuous-wave pumping at room temperature with a threshold current of 41 mA and a maximum output power of 30 mW (single facet).