Solar spectra datasets at optimum and vertical installation angles in central Europe (Berlin) during 2020, 2021 and 2022.

This article provides datasets containing three years worth of solar spectra for the optimum installation angle of 35° and the building-integrated-photovoltaics relevant vertical angle of 90°. These datasets were obtained by measuring the spectrally resolved solar spectra using a five minute interval, where two sets of spectrometers, which measure different ranges of the solar spectrum, were employed. In addition, a merged dataset of these two spectral measurements, related to every specific five minute interval measurement, is provided.

Mapping the Energetics of Defect States in CuZnSnS films and the Impact of Sb Doping.

The sub-bandgap levels associated with defect states in CuZnSnS (CZTS) thin films are investigated by correlating the temperature dependence of the absorber photoluminescence (PL) with the device admittance spectroscopy. CZTS thin films are prepared by thermolysis of molecular precursors incorporating chloride salts of the cations and thiourea. Na and Sb are introduced as dopants in the precursor layers to assess their impact on Cu/Zn and Sn site disorder, respectively.

Crystallisation Phenomena of In₂O₃:H Films.

The crystallisation of sputter-deposited, amorphous In₂O₃:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy.

Single Molecular Precursor Solution for CuIn(S,Se) Thin Films Photovoltaic Cells: Structure and Device Characteristics.

A single molecular precursor solution is described for the deposition of CuIn(S,Se) (CIS) film onto Mo-coated glass substrates by spin coating, followed by annealing in Se atmosphere. Characterization of the films by X-ray diffraction, Raman spectroscopy and scanning electron microscopy demonstrates the formation of a highly homogeneous and compact 1.1 μm thick CIS layer, with a MoSe under-layer.

Structure reinvestigation of α-, β- and γ-In2S3.

Semiconducting indium sulfide (In2S3) has recently attracted considerable attention as a buffer material in the field of thin film photovoltaics. Compared with this growing interest, however, detailed characterizations of the crystal structure of this material are rather scarce and controversial. In order to close this gap, we have carried out a reinvestigation of the crystal structure of this material with an in situ X-ray diffraction study as a function of temperature using monochromatic synchrotron radiation.