Defect engineering is an exciting tool for customizing semiconductors' structural and optoelectronic properties. Elaborating programmable methodologies to circumvent energy constraints in multievent inversions expands our understanding of the mechanisms governing the functionalization of nanomaterials. Herein, we introduce a novel strategy based on defect incorporation and solution rationalization, which triggers energetically unfavorable cation exchange reactions in extended solids.
View Article and Find Full Text PDFAlkali-metal-based synthesis of transition metal dichalcogenide (TMD) monolayers is an established strategy for both ultralarge lateral growth and promoting the metastable 1T phase. However, whether this can also lead to modified optical properties is underexplored, with reported photoluminescence (PL) spectra from semiconducting systems showing little difference from more traditional syntheses. Here, we show that the growth of WS monolayers from a potassium-salt precursor can lead to a pronounced low-energy emission in the PL spectrum.
View Article and Find Full Text PDFNew facile and controllable approaches to fabricating metal chalcogenide thin films with adjustable properties can significantly expand the scope of these materials in numerous optoelectronic and photovoltaic devices. Most traditional and especially wet-chemical synthetic pathways suffer from a sluggish ability to regulate the composition and have difficulty achieving the high-quality structural properties of the sought-after metal chalcogenides, especially at large 2D length scales. In this effort, and for the first time, we illustrated the fast and complete inversion of continuous SnSe thin-films to SbSe using a scalable top-down ion-exchange approach.
View Article and Find Full Text PDFControlled heating experiments in an inert environment have been performed on WS2 monolayers, in order to clarify the conflicting reports on the high-temperature photoluminescent response of 2D TMDs. We find that in contrast to some previous results on both WS2 and MoS2, the photoluminescent intensity shows a consistent reduction above room temperature. This is accompanied by an almost linear redshift of the peak maximum, and a nearly linear increase in the peak width, which is attributed to an enhanced interaction with optical phonons.
View Article and Find Full Text PDFPostdeposition treatments (PDTs) are common technological approaches to achieve high-efficiency chalcogenide solar cells. For SnS, a promising solar cell material, most PDT strategies to control the SnS properties are overwhelmingly based on an annealing in sulfur-containing ambient atmosphere that is described by condensed-state reactions and vapor-phase transport. In this work, a systematic study of the impact of PDTs in a N atmosphere, ampules at temperatures between 400 and 600 °C, and a SnCl treatment at 250-500 °C on the properties of SnS films and SnS/CdS solar cells prepared by close-spaced sublimation is reported.
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