Correction to Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN.

[This corrects the article DOI: 10.1021/acsaem.2c01672.

Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN.

Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were generated in epitaxial 111-ScN thin films by implantation using argon ions. The films were investigated by structural, optical, electrical, and thermoelectric characterization methods.