Monolayer 2D transition metal dichalcogenides (TMDs) are known for their direct bandgaps and pronounced excitonic effects, which facilitate efficient light absorption and high photoluminescence (PL). In this study, we report a significant enhancement in PL emission from monolayers of p-type molybdenum disulfide (p-MoS), fabricated on conductive substrates-such as indium tin oxide (ITO) and gold (Au). We attribute this behaviour to the reverse injection of charge carriers from substrates to p-MoS and the subsequent localization of electrons and holes in the substrate and p-MoS, respectively.
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