Ultra-High- Ferroelectric BaTiO Perovskite in the Gate Stack for Two-Dimensional WSe p-Type High-Performance Transistors.

The experimental demonstration of a p-type 2D WSe transistor with a ferroelectric perovskite BaTiO gate oxide is presented. The 30 nm thick BaTiO gate stack shows a robust ferroelectric hysteresis with a remanent polarization of 20 μC/cm and further enables a capacitance equivalent thickness of 0.5 nm in the hybrid WSe/BaTiO stack due to its high dielectric constant of 323.

First-Principles Simulation and Materials Screening for Spin-Orbit Torque in 2D van der Waals Heterostructures.

Recent advancements in spin-orbit torque (SOT) technology in two-dimensional van der Waals (2D vdW) materials have not only pushed spintronic devices to their atomic limits but have also unveiled unconventional torques and novel spin-switching mechanisms. The vast diversity of SOT observed in numerous 2D vdW materials necessitates a screening strategy to identify optimal materials for torque device performance. However, such a strategy has yet to be established.

Heat dissipative mechanical damping properties of EPDM rubber composites including hybrid fillers of aluminium nitride and boron nitride.

As highly integrated electronic devices and automotive parts are becoming used in high-power and load-bearing systems, thermal conductivity and mechanical damping properties have become critical factors. In this study, we applied two different fillers of aluminium nitride (AlN) and boron nitride (BN), having polygonal and platelet shapes, respectively, into ethylene-propylene-diene monomer (EPDM) rubber to ensure improved thermo-mechanical properties of EPDM composites. These two different shapes are considered advantageous in providing effective pathways of phonon transfer as well as facilitating sliding movement of packed particles.