Challenges and opportunities in engineering next-generation 3D microelectronic devices: improved performance and higher integration density.

In recent years, nanotechnology and materials science have evolved and matured, making it increasingly easier to design and fabricate next-generation 3D microelectronics. The process has changed drastically from traditional 2D microelectronics, resulting in improved performance, higher integration density, and new functionalities. As applications become more complex and power-intensive, this technology can address the demands of high-performance computing, advanced sensors, and cutting-edge communication systems wearable, flexible devices, To manufacture higher-density microelectronics, recent advances in the fabrication of such 3D devices are discussed.

Improved thermoelectric performance of PEDOT:PSS/BiTe/reduced graphene oxide ternary composite films for energy harvesting applications.

We report a significant enhancement in the thermoelectric power of PEDOT by fabricating a novel ternary composite film by incorporating BiTe and rGO. A series of five samples of PEDOT:PSS/BiTe/rGO ternary composite films were synthesized using a spin coating method and having different weight% (0.0, 0.

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

Silicon photonics is rapidly evolving as an advanced chip framework for implementing quantum technologies. With the help of silicon photonics, general-purpose programmable networks with hundreds of discrete components have been developed. These networks can compute quantum states generated on-chip as well as more extraordinary functions like quantum transmission and random number generation.

Effect of Eu doping on the thermoluminescence of UV and gamma irradiated Mg B O nanophosphors.

This article presents the effect of europium (Eu) doping on the thermoluminescence (TL) of ultraviolet (UV-254 nm) and gamma irradiated triclinic Mg B O nanophosphors. The diffuse reflectance predicts slight decrease in band gap from 5.18 to 4.

Structural, diffuse reflectance and luminescence study of t-MgBO nanostructures.

We report here the structural, reflectance, photoluminescence and thermoluminescence study of -MgBO nanostructures synthesized using optimized combustion method relatively at much lower temperature. The rietveld refinement of X-ray diffraction data confirms single-phase triclinic crystal structure of MgBO nanoparticles. The direct band gap determined using diffuse reflectance spectra (DRS) was 5.

Electronic transport properties of BN sheet on adsorption of ammonia (NH3) gas.

We report the detection of ammonia gas through electronic and transport properties analysis of boron nitride sheet. The density functional theory (DFT) based ab initio approach has been used to calculate the electronic and transport properties of BN sheet in presence of ammonia gas. Analysis confirms that the band gap of the sheet increases due to presence of ammonia.