Publications by authors named "Raksan Ko"
Discov Nano
November 2024
Article Synopsis
- Low-frequency noise (LFN) in semiconductor devices is critical for understanding their performance and material defects.
- Research on ambipolar transistors and their LFN characteristics has been limited, prompting this investigation into MoTe transistors.
- The study finds that CYTOP-induced p-type doping alters carrier transport, reducing n-type noise and contact resistance effects while affecting LFN differently between n-type and p-type modes.
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