Comprehensive Review on the Impact of Chemical Composition, Plasma Treatment, and Vacuum Ultraviolet (VUV) Irradiation on the Electrical Properties of Organosilicate Films.

Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composition, vacuum ultraviolet (VUV) irradiation, and plasma treatment on the electrical properties of these films. Through an extensive survey of literature and experimental findings, we elucidate the intricate interplay between these factors and the resulting alterations in electrical conductivity, dielectric constant, and breakdown strength of OSG films.

Mechanisms of hydrogen atom interactions with MoSmonolayer.

The mechanisms of H atoms interactions with single-layer MoS, a two-dimensional transition metal dichalcogenide, are studied by static and dynamic DFT (density functional theory) modeling. Adsorption energies for H atoms on MoS, barriers for H atoms migration and recombination on hydrogenated MoSsurface and effects of H atoms adsorptions on MoSelectronic properties and sulfur vacancy production were obtained by the static DFT calculations. The dynamic DFT calculations give insight into the dynamics of reactive interactions of incident H atoms with hydrogenated MoSat H atoms energies in the range of 0.

Simulation of diffuse, constricted-stratified, and constricted modes of a dc discharge in argon: Hysteresis transition between diffuse and constricted-stratified modes.

This paper presents the results of theoretical studies of high-pressure p (tens and hundreds of Torr) direct current (dc) discharges in argon. The diffuse (D), constricted-stratified (CS), and constricted (C) discharge modes are studied using a developed one-dimensional (radial) model. The model includes the conservation equations for electrons, ions (Ar+ and Ar2+), and excited atoms (metastable and resonant states) for mean electron energy and for the temperature of the high-energy part of the electron-energy distribution function (EEDF), the heat conduction equation for the neutral gas, and Poisson's equation for the radial electric field.

Ion energy distribution function in dual-frequency rf capacitively coupled discharges: analytical model.

An analytical approach is used to calculate an ion energy distribution function (IEDF) in a dual frequency (DF) collisionless rf discharge in argon. Three possible limit regimes for frequency relations in the DF discharge are discussed. The analytical IEDF is obtained for the intermediate-frequency case, which is most applicable in plasma-processing technologies.