Large area stacking of van der Waals heterostructure arrays, based on 2D Transition Metal Dichalcogenide semiconductors (TMDs), is achieved by an original physical deposition process utilizing Ion Beam Sputtering. Silica substrates endowed with periodically faceted nanoridges are fabricated using interference lithography and serve as templates for maskless deposition of TMD at glancing angles. This approach enables the creation of laterally confined few-layer WS nanostripe arrays coated by MoS films.
View Article and Find Full Text PDF