In-situ observation of lateral AlAs oxidation and dislocation formation in VCSELs.

Understanding how defects are generated and propagate during operation in modern vertical cavity surface emitting lasers (VCSEL) is an important challenge in order to develop the next generation of highly reliable semiconductor lasers. Undesired oxidation processes or performance degrading dislocation networks are typically investigated by conventional failure analysis after damage formation. In this works new approach to VCSEL failure analysis, oxide confined high power VCSELs are investigated in-situ at elevated temperatures in a transmission electron microscope.